A diode lasers of 532nm and 473nm wavelengths were used to produce silicon nanostructure by laser induced etching process for n-type silicon wafer of orientation . The laser irradiation was carried out using different laser power density of (2. 5. 10 and 20 W/cm2 for recorder radiation time (4 min. https://parisnaturalfoodes.shop/product-category/osteomove-ex-strength/